VDS =30V,I =150AR <3.2 mΩ @ VGS =10VRDS(ON) <4.0mΩ @ VGS =4.5V● High density cell design for ultra low Rdson● Fully characterized avalanche voltage and current● Good stability and uniformity…
20V4A65mOhm 4/5V
STN4NF20L 200 V < 1.5 Ω 1 A
PNP 45V 100mA 150MHz
NPN 50V 100mA 150MHz
The given datasheet may not correspond to this transistor
VDS (V) = 40VID = 14A (VGS = 10V)RDS(ON) < 11.5mΩ (VGS = 10V)RDS(ON) < 15.5mΩ (VGS = 4.5V)
Drain Source-60V Id-210mA
Specially designed for use at 5 V supply voltage• High forward transfer admittance• Short channel transistor with high forward transferadmittance to input capacitance ratio• Low noise gain controlled amplifier up…
collector-emitter -30V Ic-50mA f-300MHz
Collector Emitter Voltage VCEO- 30 V Collector Current I C- 1 A Transition Frequency -130MHz
Collector-Emitter Voltage V CEO -50 V Collector Current I C -150 mA Low Noise : NF=1dB(Typ.). at f=1kHz
Drain-Source Voltage VDS- 20 V Gate-Source Voltage V GS- ±10 V Continuous Drain Current I D -6 A Drain-source on-resistance VGS =2.5V, I D =3A - 30-45mOhm
P-channel 20V 108A Rds=3.5mOhm
45V 100mA 100MHz
The MD1803DFH is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to…
N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™Power MOSFETs in TO-220 and TO-220FP packages
Latest Trench Power AlphaMOS (αMOS LV) technology 30V 30A 5mOhm• Very Low RDS(on) at 4.5VGS• Low Gate Charge• High Current Capability• RoHS and Halogen-Free Compliant