HEXFET,logic level mosfet,

Transistor FNK30H150.MOSFET 150A 30V.Datasheet

VDS =30V,I =150AR <3.2 mΩ @ VGS =10VRDS(ON) <4.0mΩ @ VGS =4.5V● High density cell design for ultra low Rdson● Fully characterized avalanche voltage and current● Good stability and uniformity…

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8205 Dual MOSFET.Datasheet

Drain-Source Voltage VDS- 20 V Gate-Source Voltage V GS- ±10 V Continuous Drain Current I D -6 A Drain-source on-resistance VGS =2.5V, I D =3A - 30-45mOhm

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AON7544.N-ch 30V 30A 5mOhm.Datasheet

Latest Trench Power AlphaMOS (αMOS LV) technology 30V 30A 5mOhm• Very Low RDS(on) at 4.5VGS• Low Gate Charge• High Current Capability• RoHS and Halogen-Free Compliant

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How to determine the original MOSFET from a fake one

When buying field-effect transistors, you can purchase a fake.The fake will be like a field-effect transistor, but the real characteristics will be worse than the original transistor.Such a transistor will…

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FQPF10N60C.MOSFET 600V 9.5A 0.73Ohm

9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V• Low gate charge ( typical 44 nC)• Low Crss ( typical 18 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability

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APM3054N.MOSFET 30V 15A Datasheet

Drain-Source Voltage  30V Maximum Drain Current – Continuous 15A Drain-Source On-state Resistance 75-90 mOhm

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