Mosfet transistors

VDS =30V,I =150AR <3.2 mΩ @ VGS =10VRDS(ON) <4.0mΩ @ VGS =4.5V● High density cell design for ultra low Rdson● Fully characterized avalanche voltage and current● Good stability and uniformity…

20V4A65mOhm 4/5V

STN4NF20L 200 V < 1.5 Ω 1 A

VDS (V) = 40VID = 14A (VGS = 10V)RDS(ON) < 11.5mΩ (VGS = 10V)RDS(ON) < 15.5mΩ (VGS = 4.5V)

Drain  Source-60V Id-210mA

Drain-Source Voltage VDS- 20 V Gate-Source Voltage V GS- ±10 V Continuous Drain Current I D -6 A Drain-source on-resistance VGS =2.5V, I D =3A - 30-45mOhm

P-channel 20V 108A Rds=3.5mOhm

N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™Power MOSFETs in TO-220 and TO-220FP packages

Latest Trench Power AlphaMOS (αMOS LV) technology 30V 30A 5mOhm• Very Low RDS(on) at 4.5VGS• Low Gate Charge• High Current Capability• RoHS and Halogen-Free Compliant

When buying field-effect transistors, you can purchase a fake.The fake will be like a field-effect transistor, but the real characteristics will be worse than the original transistor.Such a transistor will…

9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V• Low gate charge ( typical 44 nC)• Low Crss ( typical 18 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability

Drain-Source Voltage  30V Maximum Drain Current – Continuous 15A Drain-Source On-state Resistance 75-90 mOhm

Continuous drain current  30A Drain-source breakdown voltage 30V Drain-source on-state resistance 31mOhm

Drain to source voltage  20V Drain current 12mA Input capacitance  2.5pF

Drain-source breakdown voltage 600V Continuous drain current 7.3A Drain-source on-state resistance 0.6 Ohm

Drain-source voltage  250V drain current  2.7A RDS(on) 2 Ohm

Drain-source voltage  200V drain current  5.2A Rds 0.8 Ohm

drain-source voltage  25V drain current  66A drain-source on-state resistance 10.5 mOhm

Drain source voltage 25V Drain current 75A Rds 7.5 mOhm

Drain-source Voltage 400V Drain Current 4.7A Static Drain-source On Resis tance 1.8 Ohm