The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM MB85R256 is able to retain data without back-up battery.
The memory cells used for the MB85R256 has inproved at least 1010 times of read/write access per bit, significantly
outperforming FLASH memory and EEPROM in durability.
The MB85R256 uses a pseudo – SRAM interface compatible with conventional asynchronous SRAM

• Bit configuration: 32,768 words x 8 bits
• Read/write durability: 1010 times/bit (Min)
• Peripheral circuit CMOS construction
• Operating power supply voltage: 3.0 V to 3.6 V
• Operating temperature range: −40 °C to +85 °C
• 28-pin, SOP flat package
• 28-pin, TSOP(1) flat package