- Drain−source voltage VDSS 900 V
Drain−gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate−source voltage VGSS ±30 V
Drain current 2.5A
Pulse IDP 7.5 A
Drain power dissipation (Tc = 25°C) PD 40 W
Storage temperature range Tstg − 55~150 °C
- Gate leakage current IGSS VGS = ±25 V, VDS = 0 V 10uA
- Drain cut−off current IDSS VDS = 720 V, VGS = 0 V 100 μA
- Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ― 4.0 V
Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 1.5 A ― 5.6 -6.4 Ω
Forward transfer admittance |Yfs| VDS = 20 V, ID = 1.5 A 1.0…. 2.0 ― S
Input capacitance Ciss 510 pF
Reverse transfer capacitance Crss 10 pF
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz 55pFRise time tr 20 nS
Turn−on time ton 60 ns
Fall time tf 40 ns
Switching time
Turn−off time toff 115nS
Total gate charge (gate−source
plus gate−drain) Qg 21 nC
Gate−source charge Qgs 11 nC
Gate−drain (“miller”) Charge Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 2.5 A
10 nC
