Memory chips

Memory chip KMF310012M-B305 is used in the Samsung A300F phone

The M24C01(C02) is a 1(2)-Kbit I2C-compatible EEPROM (Electrically ErasablePROgrammable Memory) organized as 128 (256) × 8 bits.The M24C01/02-W can be accessed with a supply voltage from 2.5 V to 5.5…

The MX29LV040 is a 4-mega bit Flash memory orga-nized as 512K bytes of 8 bits. MXIC's Flash memoriesoffer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV040…

The FM25F04 is a 4M-bit (512K-byte) Serial Flashmemory, with advanced write protectionmechanisms. The FM25F04 supports the standardSerial Peripheral Interface (SPI).The FM25F04 can be programmed 1 to 256 bytes ata time,…

- 2.5V +/-0.2V Power Supply for DDR400/333- 2.4V~2.7V Power Supply for DDR500- Up to 250 MHz Clock Frequency- Double Data Rate architecture; two data transfers per clock cycle- Differential clock inputs (CLK and CLK…

• Low power CMOS– Active current less than 3.0 mA– Standby current less than 35 μA• Hardware write protection– Write control pin• Internally organized as eight banks– 256 pages x…

The MX29LV002C is a 2 mega bit Flash memory organized as 256K bytes of 8 bits

The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families supportindustrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage forbattery…

The SST49LF00xA flash memory devices are designed to be read-compatible to the Intel 82802 Firmware Hub (FWH) device for PC-BIOS application. It provides protection for the storage and update of code and…

M13S2561616A  4M x 16 Bit x 4 Banks Double Data Rate SDRAM - Double-data-rate architecture, two data transfers per clock cycle - Bi-directional data strobe (DQS) - Differential clock inputs (CLK…

EN25Q32B-104HIP (Q32B-104HIP) • Single power supply operation- Full voltage range: 2.7-3.6 volt• Serial Interface Architecture- SPI Compatible: Mode 0 and Mode 3• 32 M-bit Serial Flash- 32 M-bit/4096 K-byte/16384 pages-…

The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits Single 5-volt operations:− 5-volt Read− 5-volt Erase− 5-volt Program• Fast Program operation:− Byte-by-Byte programming:…

1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTIONSINGLE SUPPLY VOLTAGE:– 3V to 5.5V for ST24x02 versions– 2.5V to 5.5V for ST25x02 versions– 1.8V to 5.5V for ST24C02R version onlyHARDWARE…

W9864G6JH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words* 4 banks* 16 bits. - 3.3V± 0.3V for -5/-6/-6I/-6A speed grades power supply -2. 7V~3.6V for -7/-7S speed…

W25Q16BV-16Mbit serial flash memory with dual and quad spi. • Family of SpiFlash Memories – W25Q16BV: 16M-bit / 2M-byte (2,097,152) – 256-bytes per programmable page • Standard, Dual or Quad…

ST93C66-4K EEPROM. -1 MILLION ERASE/WRITE CYCLES, with-40 YEARS DATA RETENTION-DUAL ORGANIZATION: 256 x 16 or 512 x 8-BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS-SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE-READY/BUSY SIGNAL DURING PROGRAMMINGSINGLE SUPPLY VOLTAGE:– 4.5V…

W9464G6IH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM); organized as 1M words × 4 banks × 16 bits. W9464G6IH delivers a data bandwidth of up…

K4T1G164QJ-BCE7.1Gb J-die DDR2 SDRAM. • JEDEC standard VDD = 1.8V ± 0.1V Power Supply• V DDQ = 1.8V ± 0.1V• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin,533MHz fCK for…

The MX30LF1G18AC is a 1Gb SLC NAND Flash memory device. Its standard NAND Flash features and reliable quality of typical P/E cycles 100K (with ECC), which makes it most suitable…

Such a chip is used in the hard disk WD1600AAJS.Datasheet I bring to the chip PM25LV020,these are probably the same chips.