K4T1G164QG-BCE7.1GB j-die DDR2 SDRAM.Datasheet

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K4T1G164QJ-BCE7.1Gb J-die DDR2 SDRAM.

• JEDEC standard VDD = 1.8V ± 0.1V Power Supply
• V DDQ = 1.8V ± 0.1V
• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin,
533MHz fCK for 1066Mb/sec/pin
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6, 7
• Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5, 6
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an
optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
– 50ohm ODT
– High Temperature Self-Refresh rate enable