W9464G6IH.DDR-SDRAM 1M words.Datasheet

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W9464G6IH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM); organized as 1M words × 4 banks × 16 bits. W9464G6IH delivers a data bandwidth of up to 500M words per second.Such a chip is used in the hard disk WD1600AAJS

2.5V ±0.2V Power Supply for DDR 333/400
2.6V ±0.1V Power Supply for DDR500
Up to 250 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and CLK )
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5, 3 and 4
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
15.6μS Refresh interval (4K/64 mS Refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant