The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming…
The EDS6432AFTA, EDS6432CFTA are 64M bits SDRAMs organized as 524,288 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock.Supply voltages are 3.3V…
The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8…
The MSM51V4265E is a 262,144-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V4265E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a…
The GD25Q16 (16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and…
The AT25F512A provides 524,288 bits of serial reprogrammable Flash memory organized as 65,536 words of 8 bits each. The device is optimized for use in many industrial and commercial applications…
The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits (Max.frequency 200 MHz). Synchronous design allows precise cycle controls with…
The 24c08 microcircuit is a non-volatile memory microcircuit that can be repeatedly electrically reprogrammed and data exchange occurs via the I2C serial interface. The reprogramming cycles of the microcircuit reach…