K6F2008V2E-YF70.CMOS static RAM 256k×8.Datasheet

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  • Рубрика записи:Memory chips

The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support
industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for
battery back-up operation with low data retention current

• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 2.7 ~ 3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs