FDFS2P102A.P-Channel MOSFET and Schottky Diode.Datasheet

The FDFS2P102A combines the exceptional performance of Fairchild’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

  • MOSFET Drain-Source Voltage                     20 V
    VGSS MOSFET Gate-Source Voltage          ±20 V
    ID Drain Current                                               3.3 A                          Pulsed –10A
  • Gate Threshold Voltage                                  1…3V
  • Static Drain–Source VGS = –10 V                                       96…125 mOhm 
  •                                      VGS = –4.5 V                                     152…200mOhm
  • Input Capacitance                                                                  182pF
    Operating and Storage Junction Temperature Range –55 to +150 °C
    VRRM Schottky Repetitive Peak Reverse Voltage       20 V
    IO Schottky Average Forward Current                            1 A