FDFS6N303.N-Channel MOSFET with Schottky Diode.Datasheet

Fairchild Semiconductor’s FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package.The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. FETKEY products are particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable.

Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
ID Drain Current – Continuous  6 A        – Pulsed 30   

Gate Threshold Voltage         1…3V

Static Drain-Source On-Resistance  VGS = 10 V     25…35mOhm

                                                              VGS = 4.5 V     43…50mOhm                                                        

Input Capacitance                               350pF

Power Dissipation for Dual Operation 2 W
 Operating and Storage Temperature Range -55 to 150 °C
Diode schottky VRRM Repetitive Peak Reverse Voltage 30 V
 Average Forward Current 2A