MD1803DFH.High voltage NPN Power transistor.Datasheet

The MD1803DFH is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
bringing updated performance to the Horizontal
Deflection stage.
VCES Collector-emitter voltage (VBE = 0) 1500 V
VCEO Collector-emitter voltage (IB = 0) 700 V
VEBO Emitter-base voltage (IC = 0) 7 V
IC Collector current 10 A