◆ Memory ◆ Working voltage: 1.8V~4.5V@16MHz
– ROM: 4Kx16bit Working temperature: –20°C~75°C
– Universal RAM: 256x8bit ◆ Internal RC: design frequency of 8MHz/16MHz
◆ 8 level stack buffer ◆ Built–in 128–byte EEPROM
◆ Clean instructions (66 instructions) ◆ PWM mod with complementary outputs
◆ Instructions period (single instruction or
double instructions)
5 pwm channels which can be configurated as 2
groups of complementary outputs
◆ Built–in low voltage detection circuit
4 PWM circuit with shared period and 1 PWM circuit
with separated period, they are all independent duty
cycles
◆ Built–in WDT timer ◆ PGA: 1 mod
◆ Interrupt source – Internal optional magnification of 4/8/16
– 2 timer interrupt ◆ Built–in 1 USART communication mod
Interrupt for change in electrical level
RA/RB/RC port
– Support synchronous master–slave mode and
asynchronous full–duplex mode
Other peripherals interrupt – Can be configured on RB4/RB3 or RA5/RA6
◆ Timer ◆ High precision 12–bit ADC
8–bit timer: TIMER0, TIMER2 – Built–in high precision 1.2V reference voltage
TIMER2 can select external 32.768kHz
crystal oscillator as timer clock source ±1.5% @VDD=1.8V~4.5V TA=25°C
◆ – Built–in LVD mod ±2% @VDD=1.8V~4.5V TA=–20°C~75°C
– Choice of voltage: – Can choose internal reference:1.2V/2V/2.4V
2.2V/2.4V/2.7V/3.0V/3.3V/3.7V/4.0V/4.3V – The fastest conversion rate is 250ksps
◆ – Built–in 1 IIC communication mod ◆ Built–in 50mA constant current output
◆ – Built–in 1 SPI communication mod ◆ Built–in touch button detection mod
◆ – COMP: 1 mod ◆ – Built–in 32–byte EEPROM
– Can be rewritten over 10000 times